UVISEL Plus Spectroscopic Ellipsometer
The Reference Ellipsometer for Thin Film Measurements The UVISEL Plus ellipsometer range offers the best combination of modularity and performance for advanced thin film, surface and interface characterization. The new UVISEL Plus includes the newest acquisition technology designed to measure faster and more accurately than ever. FastAcq, the newest acquisition technology, is based on double modulation, designed for real w…
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Good product! Reproducible data achieved every time.
Semiconductors
This product is low efforts and you can save your time while getting your results. Advanced features are embedded in this product. Optical gain is also very good.
Review Date: 10 Feb 2021 | HORIBA Scientific
The Reference Ellipsometer for Thin Film Measurements
The UVISEL Plus ellipsometer range offers the best combination of modularity and performance for advanced thin film, surface and interface characterization.
The new UVISEL Plus includes the newest acquisition technology designed to measure faster and more accurately than ever. FastAcq, the newest acquisition technology, is based on double modulation, designed for real world thin film characterization.
Optical Characterization of ITO Films Prepared in Different Atmospheres Using Spectroscopic Ellipsometry
Indium tin oxide (ITO) is one of the most widely used transparent conducting oxides because of its two chief properties, its electrical conductivity and optical transparency, as well as the ease with which it can be deposited as a thin film. Thin films of ITO are used in organic light-emitting diodes, solar cells, antistatic coatings and EMI shieldings. The aim of this study was to see the effect of the heat treatment conditions in various atmospheres on optical properties of ITO films, by spectroscopic ellipsometry over the spectral range 190-2100nm.
Characterization of Silicon Nanoparticles Embedded in a Silicon-Nitride Matrix by Spectroscopic Ellipsometry
Silicon nanoparticles (Si-nps) show different optical properties than bulk silicon. A strong correlation has been established between the particle size and the band-gap for example. These particular properties offer potentialities of application in optoelectronics, silicon based memories and third generation solar cells. In this application note, nanoparticles embedded in a dielectric matrix were used to enhance the photovoltaic effect. It demonstrates the successful application of spectroscopic ellipsometry to the characterization of SRN thin layers.
Ellipsometric Characterization of Doped and Undoped Crystalline Diamond Structures
Diamond is an attractive material for various fields of technology. In addition to reviewing some of the potential applications of diamond, this note, demonstrates how spectroscopic ellipsometry can be used to characterize the optical and structural properties of doped and undoped diamond layers.
