New study uses machine learning to bridge the reality gap in quantum devices
Researchers explore the challenges of scaling and combining quantum devices (qubits) for applications like climate modeling
14 Jan 2024
Industry news
A study led by the University of Oxford has used the power of machine learning to overcome a key challenge affecting quantum devices. For the first time, the findings reveal a way to close the ‘reality gap’ – the difference between predicted and observed behavior from quantum devices.
Quantum computing could supercharge a wealth of applications, from climate modeling and financial forecasting, to drug discovery and artificial intelligence. But this will require effective ways to scale and combine individual quantum devices (also called qubits). A major barrier against this is inherent variability – where even apparently identical units exhibit different behaviors.
Functional variability is presumed to be caused by nanoscale imperfections in the materials that quantum devices are made from. Since there is no way to measure these directly, this internal disorder cannot be captured in simulations, leading to the gap in predicted and observed outcomes.
To address this, the research group used a 'physics-informed' machine learning approach to infer these disorder characteristics indirectly. This was based on how the internal disorder affected the flow of electrons through the device.
The researchers measured the output current for different voltage settings across an individual quantum dot device. The data was input into a simulation which calculated the difference between the measured current with the theoretical current if no internal disorder was present. By measuring the current at many different voltage settings, the simulation was constrained to find an arrangement of internal disorder that could explain the measurements at all voltage settings. This approach used a combination of mathematical and statistical approaches coupled with deep learning.
Not only did the new model find suitable internal disorder profiles to describe the measured current values, it was also able to accurately predict voltage settings required for specific device operating regimes.
Crucially, the model provides a new method to quantify the variability between quantum devices. This could enable more accurate predictions of how devices will perform, and also help to engineer optimum materials for quantum devices. It could also inform compensation approaches to mitigate the unwanted effects of material imperfections in quantum devices.