NX-Hivac allows failure analysis engineers and researchers to improve the sensitivity and resolution of their measurements through scanning spreading resistance microscopy (SSRM) in high vacuum. Because high vacuum scanning offers greater accuracy and better repeatability than ambient or dry N2 conditions, users can measure a wide range of dopant concentration and signal response in failure analysis applications.
The high vacuum SSRM, available on Park NX-Hivac, enables 2D carrier profiling of next generation devices and measures the high resolution AFM images at the same time to improve production yield. The measurements show much higher accuracy and resolution than in ambient condition. Due to the very high sensitivity and responsiveness to the current signal, SSRM also ensures a high repeatability, providing a high-level tool for semiconductor failure analysis.