Application Note: Intrinsic electrical characterization of two-dimensional transition metal dichalcogenides via scanning probe microscopy

9 September 2021

In this application note, scanning probe microscopy (SPM) is used to investigate the intrinsic electrical properties of as-deposited 2D TMDs. Conductive atomic force microscope (C-AFM) is performed directly on the surface of as-grown 2D materials without any patterning using a Park NX-Hivac AFM.

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