Characterizing Structural and Electronic Properties of 2D Materials Using RISE Correlative Microscopy
17 August 2018

Materials consisting of only one or a few layers of atoms; i.e. 2D materials such as graphene and transition metal dichalcogenides, have attracted much attention due to their exceptional electronic and optical properties.  For applied research and their integration with electronic circuits and sensors, the quality of the 2D materials is of great interest in terms of defects such as wrinkles, folding or lattice mismatches as this strongly influences the electronic and phonic properties.

In this application note, discover how enhanced characterization of such 2D materials can be achieved with RISE correlative microscopy, the in situ combination of Raman imaging and scanning electron microscopy techniques, and how localised morphological, electronic and phononic detail of graphene, MoS2 and WS2 can be revealed at the nanoscale, including edge defects, stacking order, wrinkles, twist angles and photoluminescence.