ResourceSpectroscopy

Raman and Photoluminescence Measurements on Laser Lithographically Written Structures in Silicon

18 Sept 2014

Silicon (Si) plays an important role in semiconductor devices. During manufacturing, the structures in Si are traditionally generated using lithography. Confocal Raman and Photoluminescence (PL) imaging are useful tools for quality assurance to investigate stress and stress induced artifacts in Si of semiconductor devices. This application note describes the performance of system laser scribing, confocal Raman imaging and confocal PL imaging on a crystalline Si sample with a single microscope system.

iDus InGaAs CCD Detector

Oxford Instruments Andor

From the manufacturer’s of the World's most compact and reliable spectroscopic CCD detector, comes a new Near Infrared detector solution, the Andor iDus InGaAs detector array system. With all the benefits you’ve come to expect from the iDus range of detectors, the iDus InGaAs detector offers a choice of 512 or 1024 element linear photodiode arrays (PDA) ideal for NIR spectroscopy with high sensitivity output and high resolution covering wavelengths from 800nm up to 2200nm. Andor's iDus InGaAs 1.7 Array Detector series provides the most optimized platform for Spectroscopy applications up to 1.7 µm. The TE-cooled, in-vacuum sensors reach cooling temperatures of -90°C where best Signal-to-Noise ratio can be achieved. Indeed dark current will improve moderately below -90°C where scene black body radiation will dominate, while Quantum Efficiency of the sensor will be greatly impacted at these lower temperatures and lead to a lower Signal-to-Noise ratio.Andor's iDus InGaAs 2.2 Array Detector series provides the most optimized platform for Spectroscopy applications up to 2.2 µm. The TE-cooled, in-vacuum sensors reach cooling temperatures of -90°C where best Signal-to-Noise ratio can be achieved. Indeed dark current will improve moderately below -90°C where scene black body radiation will dominate, while Quantum Efficiency of the sensor will be greatly impacted at these lower temperatures and lead to a lower Signal-to-Noise ratio.

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Raman and Photoluminescence Measurements on Laser Lithographically Written Structures in Silicon