Analyze Silicon Carbide (SiC) with the inVia Raman Microscope
10 November 2015
Silicon carbide has significant advantages over silicon, such as a wider band gap, higher thermal conductivity, and higher breakdown field. It is also chemically and thermally inert. These properties make it attractive for use in transistors (JFETS, MOSFETs, etc.) in applications such as high temperature electronics, and in fast high voltage devices for more efficient power transmission and high temperature operation. The properties of silicon carbide are highly dependent on its crystal structure (it can exist in many polytypes), on the quality of the crystal, and on the number and types of defects present. This application note demonstrates the analysis of SiC using Raman microscopy.