Centurio from JEOL is a novel Silicon Drift Detector (SDD) EDS that collects X-rays from samples at an unprecedented large solid angle of up to 0.98 steradians from a detection area of 100mm2. The larger the solid angle of measurement, the more data the EDS collects to construct detailed analytical maps of the elements in the sample.
With the ability to efficiently collect x-rays at very high count rates, Centurio speeds elemental mapping and improves element detection sensitivity without loss of energy resolution. Large pixel number EDS maps can be made at rates ten times faster than with previous EDS designs, with excellent signal-to-noise ratio. Combined with the large probe currents in small probe sizes attainable with aberration-corrected STEM, fast, efficient atomic resolution EDS analysis is possible.
The automatically retractable side entry design allows fast repositioning to avoid irradiation from back-scattered electrons.
Centurio exponentially expands the elemental mapping capability for the JEOL 200kV and higher TEMs, including the JEM-ARM200F atomic resolution TEM with optional cold Field Emission Gun, and the new JEM-2800 automated, high throughput, nano-area analysis TEM.