Helios NanoLab 1200AT - DualBeam by FEI Company
The Helios NanoLab 1200AT can create site-specific TEM samples thin enough to capture a single transistor at the 10nm node, from wafers up to 300mm in diameter.
An optional Automated FOUP Loader (AFL) allows the system to be located inside the semiconductor wafer fab, where it can deliver critical information up to three times faster than laboratory-based analysis.
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